Comparison of Complementary JFET Parameters on Technological Processes of JSC "Integral" (Minsk) and JSC "SPE "Pulsar" (Moscow) at Low Temperatures

The volt-ampere characteristics (VAC) at temperatures from minus 197 ° C to 30 ° C of n-JFET and p- JFET, manufactured at JSC "SPE "Pulsar" using a complementary bipolar technological route, are considered. Features of the VACs are described and the obtained temperature approximations of the main parameters are given. We have compared the JFET's VACs manufactured at JSC "SPE "Pulsar" and JSC "Integral".