Early Study of Transistor and Circuit Parameter Variation for 180 nm High-Temperature SOI CMOS Production Technology

In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27...+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method involving a library of corner models provides a reasonable estimate of circuits behavior scatter due to the simultaneous influence of very high temperature and production process variability.