Impact of Contact Material on the Resistive Switching in Nanocrystalline ZnO Films for Forming-Free Neuromorphic Elements Manufacturing

The work represents the results of contact material impact on the resistive switching in nanocrystalline ZnO film. It was shown, W/ZnO/ZnO:In structure demonstrated forming free resistive switching with HRS/LRS ratio 10. The results of experimental studies of W/ZnO/ZnO:In structure showed, that at sweep voltage 3V, HRS and LRS were equalled to 155.2±7.5 kΩ and 15.6±4.1 kΩ for endurance test, also 148.7±28.1 kΩ and 18.3±10.2 kΩ for homogeneity test, respectively. The results can be used to manufacture neuromorphic systems based on forming-free nanocrystalline ZnO films.