Microcavity-based semiconductor lasers for near- and deep-UV applications

Summary form only given. We achieved ultraviolet lasing in optically pumped GaN/AlGaN separate confinement heterostructures (SCHs) with remarkably low lasing threshold. Strongly polarized (TE:TM = 300:1) modes were observed over the wavelength range of 358-367 nm. To our knowledge, this is the shortest-wavelength lasing reported to date. The analysis of mode spacing, far-field patterns, and surface morphology indicated that the lasing is due to high-finesse microcavities formed in the active region.