Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing

Low on/off ratio gravely hinders the application of magnetoresistance (MR) devices for the accurate and reliable data fetch. In this paper, a rectified tunnel MR (R-TMR) device is fabricated by integrating perpendicular-magnetic-anisotropy magnetic tunnel junction (PMA MTJ) and Schottky diode. High on/off ratio, intrinsic non-volatility and multi-dimensional regulation capabilities can be obtained, which makes this emerging spintronic device suitable for in-memory computing (IMC). By reversing the rectifying direction of the diode and tuning the proportions of alternating current (AC) and direct current (DC), reconfigurable logic operations have been achieved. Two proofs of concept, i.e. “NOR” and “NAND”, are experimentally performed.