Ultracompact Silicon Wafer Packaging of Deep UV LED with Excellent Cooling Performance and Light Utilization Efficiency

This paper reports a deep-UV LED (DUV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A DUV-LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has merits in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. Uniform light emission at an optical output of 30 mW and effective reflection on Si (111) slopes in the Si-PKG were observed.