A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.