Effect of Pillar Ripple on Static and Dynamic Trade-Offs in Superjunction MOSFETs

Multi-epitaxially grown superjunctions feature a fluctuation of the doping concentration (ripple) in the pillars and the ripple is highly dependent on the supplied thermal energy during the fabrication. This study thoroughly investigates the relationship between the ripple in the pillars and the static/dynamic characteristics of the device. The ripple dependent trade-offs in terms of the specific resistance and turn-off switching loss will be able to provide a guide for developing fine pitch superjunction devices.