Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2

The availability of melt-growth techniques for high quality substrates and the high critical electric field of 6-8 MV/cm makes β -Ga
₂
O
₃
an attractive material for power electronic devices [1]. To enable high field operation in Schottky barrier diodes (SBDs) without incurring excessive leakage current, reduced surface field (RESURF) techniques are generally needed [2]. With the adoption of the trench Schottky barrier diode structure, we have demonstrated an effective reduction of the leakage current in Ga
₂
O
₃
trench SBDs and a high breakdown voltage (BV) of 2.44 kV [3]. While the BV in the devices with large fin channel widths can be limited by the field crowding at trench corners [3], devices with a 1-μm fin width appear to be limited by the field crowding at the device edge [4]. In this work, we employed field plating in the Ga
₂
O
₃
trench SBDs to reduce the edge field crowding. The field plate (FP) boosts the BV of the trench SBDs, which show a record high Baliga's figure-of-merit of 0.78 GW/cm
²
from pulsed measurements.