Abstract:
A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with fT and/or fMAX over 1GHz [1]-[4]. However, thes...Show MoreMetadata
Abstract:
A number of papers have been published over the past few years demonstrating metal-oxide thin-film-transistors (TFTs) with fT and/or fMAX over 1GHz [1]-[4]. However, these works have focused purely on device-level characterization and have not demonstrated gigahertz circuit operation. In this work, we demonstrate a large-area-compatible metal-oxide TFT-based cross-coupled LC oscillator operating at 1.25GHz, processed at flex-compatible temperatures . Achieving this required co-optimization of TFT and inductor dimensions/layouts, balancing device performance with parasitics (resistances, capacitances).
Published in: 2019 Device Research Conference (DRC)
Date of Conference: 23-26 June 2019
Date Added to IEEE Xplore: 26 March 2020
ISBN Information:
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