The Influence of NAND Flash Self-Recovery Effect on Retention Error

This paper verifies the self-recovery effect of NAND flash by experiments and proposes the concept of relaxation time (t
_r
) based on self-recovery effect. Moreover, the change rule of data retention error under different degrees of self-recovery effect for blocks with different program/erase stresses is also studied. First of all, the growth trend of NAND flash storage data retention error is significantly reduced by increasing the t
_r
value. Experiments show that when t
_r
is 6h, the retention error is reduced by about 60% compared with the retention error under 0h's t
_r
at the same retention days. In addition, as tr increases, the NAND flash self-recovery effect will reach saturation. The experimental results show that when t
_r
is around 2h, increasing t
_r
will not play a significant role in reducing retention error.