A novel Uniform-Channel-Program Erase (UCPE) flash EEPROM using an isolated P-well structure

This paper describes a novel Uniform-Channel-Program-Erase (UCPE) flash EEPROM technology using an isolated P-well structure for high performance and low power applications. The UCPE bit cell utilizes Fowler-Nordheim (FN) tunneling in the channel region for both program and erase operations. By implementing a 0.55 /spl mu/m trench isolation and a triple well process, an experimental UCPE bit cell has been demonstrated in a 0.18 /spl mu/m technology.