InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis

This paper presents the design and analysis of a cost-efficient multi-junction tandem solar cell based on III-nitride alloys. In this work, band engineering between InGaN & Si layers is proposed to eliminate additional tunnel junction in between top and bottom cell, which will reduce the cost as well as enhance the performance of a solar cell. The self-tunneling effect of hetero junction is investigated using energy band diagram and the performance of solar cell is analyzed by extracting electric field intensity and current-voltage curves. Additionally, optimization of the Indium concentration and its consequent analysis are carried out to achieve high efficiency. The design of proposed solar cell is designed and simulated using TCAD tool. The multi junction solar cell achieved an open circuit voltage (Voc) of 2.09 V and short circuit current (Jsc) of 1.37 mA/cm
²
with 86.7% fill factor (FF). The proposed device may replace traditional multi junction solar cell with tunnel junction for high efficiency applications.