TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET

A new structure named double-SOI (DSOI) is investigated in this paper. Total ionizing dose (TID) experiment was carried out on DSOI nMOSFET with OFF bias during irradiation. The irradiation dose is high up to 5 Mrad(Si). Physical mechanisms involved in this device after irradiation are analyzed. In addition, an accurate model of this new structure is developed with Cogenda TCAD simulation tool. Various physical models are taken into account to achieve acceptable agreement with the experimental data. The influence of the additional BOX2 layer on the device performance after irradiation is also investigated with TCAD simulation. This new model serves for further analysis of devices and circuits fabricated with DSOI substrate.