Comparison of leakage currents in the power supply bulk and SOI transistors: calculations and experiment

SOI CMOS FETs have an order of magnitude lower than leakage currents, compared to the transistors on bulk silicon due to the lower defects density in the space charge region (SCR) of p-n junctions. The use of SOI structures for DC-DC convertors improves their energy efficiency by reducing generation-recombination leakage currents. The weak experimental dependence of leakage currents on drain voltages is explained by a strong SCR defects localization.