Al/GO/Si/ Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature

In this work, the Al/GO/Si/Al RRAM device was fabricated with solution-processed graphene oxide (GO) thin film at low temperature (50 □). A superior electrical performance and stable operation of the device has been achieved showing typical bipolar resistive switching characteristics with operation voltage lower than 3 V, retention property sustained over 10
⁴
s and endurance over 10
²
cycles. The results suggest that the solution-processed GO thin films exhibit great potential for use in the flexible device.