TCAD Analysis of III-V capacitor-less A2RAM cells

2D-TCAD simulations are conducted on III-V materials to demonstrate the feasibility of implementing A2RAM cells using non-silicon substrates. InGaAs-OI is selected based on its reduced band-gap and improved mobility. Results demonstrate valid memory behavior, further scaling perspectives than other 1T -DRAM cells and limited impact of supercoupling effect thanks to the N-Bridge and the vertical p-n junction.