Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM

In this study, a comprehensive comparison in light of the switching behavior has been made to the AlO
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dielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.2~1.8 V/-0.9~-1.3 V), a narrower RHRs/RLRs distribution (2~80 k Ω /0.8~1 k Ω) and a higher resistance ratio (8~230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.