Dual-Gate Switch-HEMT Large-Signal Modeling

In this paper, the measured linear and nonlinear characteristics of single-gate and dual-gate switch-based high electron mobility transistors (HEMTs) are compared. A new large-signal channel current model is proposed to fit the wide operation region of switch-HEMTs, especially the deep pinch-off region, high-Vgs region, and negative-Vds region. Full-wave electromagnetic analysis is used to extract the parasitic capacitances, which is very important to the accuracy of the switch model at high frequencies. A consistent dual-gate switch-HEMT large-signal modeling procedure is shown. The linear and nonlinear characteristics of the dual-gate large-signal model fit well with the measured results.