Analytical Drain-current Model for RF Flexible Graphene Filed-Effect Transistors

An analytical Drain-current (I-V) model for radio frequency (RF) flexible graphene filed-effect transistors (FGFET) is presented for the first time. In this model, a trap capacitance model is introduced by consideration of higher trapping density on plastic substrate in GFET. Moreover, a physical ‘hot’ hole injection effect model is proposed to describe abnormal shift of the Dirac point. Accurate results are observed between the simulated and measured data. This model can be used for flexible RF graphene circuits.