Influence of temperature on dose rate laser simulation adequacy

Temperature dependence of the equivalent dose rate in silicon integrated circuits (IC's) under 1.06 /spl mu/m laser irradiation is investigated. 2D-numerical modeling was carried out to analyze the temperature dependence of dose rate laser simulation adequacy in application to specialized test structures. Experimental validation was performed in the temperature range from 20 to 100/spl deg/C.