A 2T-MONOS Embedded Flash Macro With 65-nm SOTB Technology Achieving 0.15-pJ/bit Read Energy With 80-MHz Access for IoT Applications

To expand Internet of Things application ranges, ultralow active energy operations are essential in edge devices. Especially, read energy reduction in embedded Flash (eFlash) memory is strongly required to enable real-time sensing with limited energy generated by energy harvesting (EH). In this letter, 1.5-MB and 256-KB 2T-MONOS eFlash macros are developed with 65-nm silicon-on-thin-box (SOTB) technology, adopting low-energy sense amplifier and data transmission circuit techniques which enhance intrinsic advantages of SOTB devices. These macros achieve read energy of 0.15-pJ/bit with 80-MHz random read access capability, which is low enough to utilize EH technologies as energy sources.