Two-dimensional simulation of ferroelectric memory cells

An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of the resulting devices, a suitable model for the ferroelectric effects has been developed. We present this model and show the results of its implementation into a device simulator. Although this model was designed especially for analysis of ferroelectric materials, it is also applicable to magnetic hysteresis phenomena.