Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO/sub 2/

We report for the first time the use of Atomic Layer Deposition (ALD) to make a carbon-free SiO/sub 2/ dielectric gate on 4H-SiC, yielding high-quality MOS characteristics. Depositing ALD oxides on SiC would eliminate the problem of carbon related interface charges that adversely affect the electron mobility in the n-channel of MOS SiC transistors.