High indium content InGaAs/GaAs quantum well infrared photodetectors

Longwavelength InGaAs/GaAs quantum well infrared photodetectors with Indium contents ranging from 30% to 40% have been grown and characterized. It is found that the TE to TM responsivity ratio is lower than 10% in all the cases. Furthermore, a 10% increase in the Indium content from 30% to 40% only causes a very slight increase in the TE to TM ratio, not higher than 3%.