Micro-transfer-printing of InP Photonic Devices to Silicon Photonics

Micro-transfer-printing (μTP) has been applied to the heterogeneous integration of InP devices to silicon photonics. The technology provides high-throughput parallel transfer of devices, the alignment is achieved through pattern recognition, the accuracy for single posts reaches <; ±1.5 μm. A wet-etching technology based on FeCl
₃
:H
₂
O (1: 2) at controlled temperature and InGaAs or InAlAs sacrificial layers allows release InP coupons from the original substrate with selectivity to InP as high as S > 4200. A polymer anchor system has been engineered to restrain the devices to the original substrate during the undercut and to break neatly during the pick-up of the devices. Printing of InP devices has been shown on diverse photonic substrates with and without intermediate metal or adhesive layers. We review the application of μTP to the integration of InP etched facet lasers to the SOI The layout developed is suitable for edge coupling and shows a road map for hybrid polymer-SOI photonic circuits.