Stimulated emission dynamics in self-assembled InAs/GaAs quantum dots

Summary form only given. Self-assembled semiconductor quantum dots have found interest as gain materials for semiconductor lasers. While time-resolved studies on quantum dots have mainly focused on the spontaneous recombination dynamics, little is known about the dynamics of lasing and stimulated emission from the dots. In this contribution we investigate the dynamics of stimulated emission in self assembled InAs-GaAs quantum dots. The sample studied here consists of 7 layers of self assembled InAs quantum dots embedded in GaAs. This active layer is sandwiched in between two 1.2 /spl mu/m thick AlGaAs layers, resulting in a waveguide structure.