Design of Resistorless Bandgap Reference

The voltage and the current references are important blocks in analog VLSI circuits. The temperature fluctuations, operating voltage and load currents are remains constant by using the voltage reference circuits. The bipolar transistors and resistors are used in traditional bandgap reference circuits, these are consuming more area and power hence to buried this drawback, we build a resistorless bandgap reference using MOSFETs and generating a negative temperature coefficient MOSFETs are operating in sub threshold region and the inversion technique is used to received the gain. This circuit works on voltage of 1.2v and -10°c to 120°c is temperature range with temperature coefficient 4.5ppm/c. This bandgap reference circuit is implemented by cadence tool CMOS 180nm (UMCI80) technology. The silicon area is 0.027mm
²
.