Impact of Small AC Signal Superimposed on DC Bias on the Performance of Nanoscale SON Mosfets

Nanoscale fabrication of devices is precisely the future of all integrated circuits. In our previous works, quantum analytical models for DMG SON MOSFETs have been developed in the nano-regime and it was established that SON is superior to SOI because of its higher immunity to different short channel effects. SON's features and increased current driving capability, along with enhanced device scalability, provide scope for further device miniaturization, without influencing device performance. This specific work focuses on instability of such device structures, when a small AC signal superimposed on DC signal is applied at the gate, which is the real time situation in many applications of MOSFETs. The outcome obtained is compared with their corresponding bulk MOS structures. Small AC signal superimposed on DC voltage changes various electrical characteristics of DMG SON MOSFET, such as Surface Potential, Electric Field, VTH, and others. Fluctuation of these characteristics in case of normal bulk devices can be accounted as negligible, but has a significant impact on advanced structures like nanoscale DMG SON MOSFETs, resulting in performance degradation.