Comparative Wavelength-Dependent Analysis of GaAs Buried-Gate OPFET for Visible Light Communication

Visible-Light Communication (VLC) is an area of interest in the recent years. GaAs buried-gate Metal-Semiconductor Field Effect Transistor (MESFET)-based Opto-Electronic Integrated Circuit (OEIC) receivers can function as high performance receivers exhibiting tremendous sensitivity with large bandwidth and simultaneous amplification in the visible range. In this paper, we study the wavelength-dependence of optically-controlled buried gate GaAs MESFET parameters. The results show that there is no considerable variation in the characteristics with the wavelength of visible light in the range 450 nm to 700 nm. We have analyzed the results based on the absorption phenomena, the photoconductive and the photovoltaic effects, and the scaling rules-induced effects. The device shows high potential for applications wherein the same light source is used for lighting as well as communication.