Parameter Extraction Procedure for Surface-Potential-Based SiC MOSFET Model

In this paper, we study an extraction of model parameters for the current characteristics of an SiC power MOSFET model. In optimizing the model parameters, initial values are critically important to obtain a good fitting result. We define a procedure to extract the initial parameter values from the measurable device characteristics. Using a commercial SiC MOSFET, validity of the proposed parameter extraction is experimentally confirmed. We also demonstrate the robustness of the proposed method through the perturbation analysis on the extracted parameters.