Study on Accurate Thermal Modeling of Press-Pack IGBT Module with Asymmetric Double-Side Cooling Structure based on Structure Function Curve by Orthogonal Experimental Design

Press-pack insulated gate bipolar transistor (PP IGBT) has been applied to large-scale Voltage Source Converter based High Voltage Direct Current Transmission (VSC-HVDC) applications. It has a multi-layered structure, the internal electrical and thermal contact are maintained by external clamping force along with internal disc springs. In this paper, a finite element simulation model is presented, which can correct the material properties and interfacial thermal resistance of the device based on structure function curve. It obtains the structure function curve through deconvolution and network transformation. By using Bahrami plastic contacting thermal resistance model and orthogonal experimental design, contacting thermal resistance can be predicted and thermal model converges rapidly, respectively. Comparison between simulated and experimental structural function curve when FRD works in the same module has verified the thermal model.