An Optimization Framework for GaN Power Device Design and Applications

In this work, an optimization framework is discussed that combines device focused TCAD simulation with a circuit simulation platform. First a method to instantiate a TCAD device model into a circuit simulator is devised and proofed. Second, a closed loop optimization architecture is developed to simulate candidate device designs in TCAD software, instantiate them into a circuit simulator to test an application, and refine the design of the device based on its relative performance. To the authors' knowledge, this is the first demonstration of such a system for power electronics applications. This system was demonstrated using Sentaurus TCAD and the circuit simulation platform SaberRD. To show the efficacy of this method, the gate-drain length and AlGaN barrier doping concentration of a theoretical pGaN-gated GaN HEMT was optimized to reduce the energy loss of a boost converter. This method showed a 42.7% decrease in energy loss between the best initial and the final device design.