Research on Resistance to Damage Effect of Low Dose Rate Ionizing Irradiation of Bipolar Transistors

This paper analyzes the effect of the enhancement effect of low dose rate irradiation of bipolar devices on the reliability of current products. Combined with the existing manufacturing process of bipolar devices, based on the existing bipolar PNP process, the concentration in the emission area is improved. The layout of the emission area with less ratio of perimeter to area is adopted. It is a process strengthening technology which can effectively enhance the resistance to ionization irradiation of silicon PNP bipolar transistors.