A New V-MOSFET High-Power Single-Ended WPT system with International-Standard Operating Frequency

Described in this paper is a high-power single-ended wireless EV charger with a new developed SiC-VMOSFET. In the first place, presented is a wireless EV charging system which operates with a single power device. In the second place, SiC-IEMOSFET (Implantation & Epitaxial MOSFET) loss evaluations in the wireless EV charger under international standard frequency operation are discussed, and the drive circuit is optimized from a viewpoint of loss reduction. In the third place, described is a newly developed SiC-VMOSFET (V-groove trench MOSFET) for a high-power single-ended wireless EV charger. A practical normal type EV charger requires for 3kW transfer power. Experimental results indicated power device loss is sufficiently small and the SiC-VMOSFET successfully achieves enough power for 3kW operation in the miniaturized low-cost single-ended wireless EV charger.