Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes as Aligned Channel and Electrodes

Transparent top-gate aligned-channel all-carbon-nanotube thin film transistors (all-CNT-TFTs) are proposed and integrated on a polyethylene naphthalate substrate, with 99.9%-purity semiconducting carbon nanotubes (SCNTs) as channel and metallic carbon nanotubes (MCNTs) as source/drain/gate electrodes. Fabricated by Langmuir-Blodgett (LB) method, an aligned-channel all-CNT-TFT with an on/off current ratio of 3.89×10
⁴
, as well as a transparency of 86% has been achieved. The ultrathin films formed by LB method were uniform on the whole sample region, which can provide stable performance of the transistors. The aligned SCNT channel and MCNT source/drain electrodes can form clear tube-tube contact, which is useful for accurate mechanism analysis.