Low Von 17kV SiC IGBT assisted n-MOS Thyristor

The SiC MOS thyristor with IGBT was designed and fabricated for the first time. Von of 5 V and R
_onA,diff
of 15 mΩcm
²
were improved over IGBTs fabricated under the same wafer and process conditions. The on-characteristics were almost constant with temperature, and did not deteriorate at 423K. Proposed MOS thyristor succeeded in switching operation, and the switching speed was equivalent to that of the IGBT in both turn-on and turn-off.