Implementation of High Power RF Devices with Hybrid Workfunction and OxideThickness in 22nm Low-Power FinFET Technology

Unique High-Power FinFET device with multiple workfunction materials and oxide thickness under a common gate, dubbed as HyPowerFF, is introduced. The proposed devices are as reliable as high-voltage IO devices with up to 7.1V of breakdown voltage and provide 290GHz of f
_max
suitable for power-efficient RF power-amplifier (PA) design.