High-Power-Density AlGaN/GaN Technology for 100-V Operation at L-Band Frequencies

In this paper we report on the development of a 0.50 μm AlGaN/GaN on SiC technology optimized for 100-V operation. Load pull measurements reveal a power density of more than 17 W/mm and a power-added efficiency of 77.3 % at a frequency of 1.0 GHz and a drain supply voltage of 100 V. Experimental data at 125 V even shows a power density in excess of 20 W/mm. To the authors' knowledge, the demonstrated PAE of 77.3 % is the highest ever reported in L-band for 100-V operation.