Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Being the first demonstration of quasi-antiferroelertic Hf
1-x
Zr
x
O
2
(QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SS
for
=51mV/dec, SS
rev
=53mV/dec, ΔV
T
<1mV) for low onset voltage and high speed response, both forward & backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and V
FE
overlap of negative dQ/dV
FE
for forward and reverse, indicating non-hysteretic QAFE-HZO.