GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

High-performance wide-bandgap p-channel devices which can be monolithically integrated with established wide-bandgap n-channel devices are broadly desirable to expand the design topologies available in power/RF electronics. This work advances the GaN-on-AlN platform as the most promising p-channel contender to enable wide-bandgap complementary electronics. Toward that end, a new generation of GaN-on-AlN p-channel HFET s is fabricated with on-currents exceeding 100 mA/mm at room temperature under moderate drain bias. Key fabrication ingredients to this success are discussed, low-temperature characterization is shared, and new results are benchmarked against the broader literature.