A high gain CMOS LNA for Ka-Band Communication System

This paper designs a low noise amplifier (LNA) for 5G communication. The proposed LNA is designed and simulated based on 65 nm CMOS process. In order to achieve a good input impedance matching, the Gm-boosting technique based on cross-coupled capacitor is employed in the first stage designing. The rest stages are common-source structure with neutralized capacitors to improve gain performance and make LNA stable in differential-mode. The LNA achieves a maximum gain of 30.3 dB at 24.9 GHz with a 3-dB bandwidth from 22.6 to 31.6 GHz and a minimum NF of 2.17 dB at 25.5 GHz.