A Compact GaN Pulsed Power Amplifier Utilizing GaAs Matching Networks for C-band Application

In this work, a compact quasi-MMIC GaN pulsed power amplifier is presented for C-band application, including the design process and the fabrication technology. The discrete transistor manufactured by a 0.25μm Power GaN HEMT Process, is matched by input and output networks employing a GaAs integrated passive device process. The resulting PA assembly occupies an area of 4.8x4.6mm
²
, where the discrete transistor to matching networks interconnection is obtained by gold bonding wires. Taking the advantages of modulation technology into consideration, drain voltage modulation technology is adopted for the presented PA. The S-parameter measured results show a linear gain of 13dB to 15dB, an input return loss of -14dB to -7dB are achieved in 5-6GHz frequency band. In pulsed operating, the large-signal measurement results demonstrate an output power of more than 48dBm, 9dB power gain and 50% PAE are attained.