An Empirical GaN HEMT DC Model for Power Converters

This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.