The Generation of Random Numbers Using the Quantum Tunnel Effect in Transistors

This paper proposes a random number generator based on the quantum tunnel effect that takes place in transistors. The main system is divided into two basic components: the entropy source and the postprocessing block. The quantum tunnel effect is subjected to a random character, which means that electrons have a probability to pass through the potential barrier of the transistor. Theoretically, the measurable output current of the transistor should have a random variance in a predetermined interval, that results into a random sequence. Afterwards, the postprocessing block extracts the bias from the generated array. It is implemented through a hash function which employs the Toeplitz matrix, resulting into a true random sequence. This paper accounts the preliminary stages of development of an original random number generator. The focus was the physical phenomena, the tunnel effect in transistors, and the study of its probability with respect to the device parameters. In terms of postprocessing the main regard was choosing the adequate extraction method for the quantum entropy source. The novelty of the paper is represented by using the tunnel FET as an entropy source and finding a suitable postprocessing model for a higher generation rate.