Fabrication of ß-GaiO3/Si Solar-Blind UV Photodiode via Sol-Gel Method

In this paper, a new SnO
₂
/Ga
₂
O
₃
/Si heterostructure has been designed and fabricated via sol-gel spin coating method. The electrical property of SnO
₂
/Ga
₂
O
₃
/Si heterostructure is investigated in the dark and under UV illumination with a wavelength of 254 nm by means of the current-voltage (I-V) measurements. It is clearly seen that the photodiode is sensitive to UV light and it also has to rectify behavior. The fabricated solar-blind UV photodiode is a promising candidate to detect UV light. The temporal response to UV light obviously shows that the good reproducibility of the photodiode.