ß-Ga2O3/Si Heterojunction Photodiode with ZnO ARC layer in the UV Detection

In this work, a new Ga
₂
O
₃
/p-Si photodiodes with ZnO ARC layer are formed by sol-gel spin coating technique. Upon 254 nm and 395 nm UV illuminations, the device's performances were examined in terms of electrical parameters. Under a 254 nm, a good photoresponse behavior was observed. Also, lower ideality factor and higher barrier height is obtained from current-voltage characteristics. The device is solar-blind since the device does not show any significant improvement upon 395 nm. This study with combination of ZnO antireflection coating layer is prominent candidate for UV solar-blind optoelectronic devices.