Study of Circuits Based on SOI-vertical Gate-All-Around FET

The device performance of silicon-on-insulator vertical gate all around field effect transistor (SOI-VGAAFET) with three channels and optimal gate length is presented. The electrical parameters of the SOI-VGAAFET are compared with the bulk VGAAFET. SOI-VGAAFET exhibits low leakage current, good sub-threshold slope and low drain induced barrier lowering compared to the bulk VGAAFET device. The performance of analog and digital circuits based on SOI-VGAAFET are studied using three-dimensional mixed-mode device simulations. The results indicate that SOI-VGAAFET with optimal gate length is a suitable device in analog and mixed-signal integrated circuit applications at low feature-length and low supply voltage.