A new study of backend process on 0.18um BCD NLDMOS on-state BV characteristics

With the continuous expansion of power ICs in various industrial and consumer levels, the requirements for Laterally-Double-Diffused MOS(LDMOS) characteristics are getting more and more aggressive. BVon characteristics of LDMOS is rather critical for wide Safe Operation Area (SOA), requesting in higher-end fields such as automotive electronics. In this paper, based on the modular design of the 0.18μm Bipolar-CMOS-DMOS (BCD) medium and high voltage process platform, the process platform should not only consider the impact of the introduction of high-voltage process on CMOS, but also the impact of the special Back- End-Oxide-Layer(BEOL) process customized for embeds Non-Volatile Memory (E-NVM) on high-voltage devices. For the problem of insufficient on-state breakdown voltage (BVon) and poor on-chip uniformity of NLDMOS, we studied the influence mechanism about BEOL process on NLDMOS BVon characteristic.