Innovative Methodology for Short Circuit Failure Localization by OBIRCH Analysis

Lock-in thermography (LIT) is a commonly used FA technique to perform fault isolation for parametric short failures in microelectronic devices as compared with Optical Beam Induced Resistance Change (OBIRCH). This is because the OBIRCH technique becomes significantly less sensitive for direct hard short circuit parametric failure. This paper presents a simple yet innovative and effective methodology to increase resistance variances during OBIRCH analysis in hard short failures to improve the fault isolation success rate.